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GL05T to GL24T
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Vishay Semiconductors
ELECTRICAL CHARACTERISTICS GL24T (T amb = 25 °C unless otherwise specified)
pin 1 to pin 2; pin 3 not connected
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
100
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I R = 1 μA
at V R = 24 V
at I R = 1 mA
at I PP = 1 A
at I PP = 5 A
at V R = 0 V; f = 1 MHz
Pin 3 - 2
SYMBOL
N channel
V RWM
V R
I R
V BR
V C
C D
35
G L24T
MIN.
-
-
24
-
26.7
-
-
-
TYP.
-
-
-
-
28.2
-
-
2.5
Pin 1 - 3
MAX.
1
24
-
1
33
43
55
5
UNIT
lines
V
V
μA
V
V
V
pF
30
10
1
0.1
0.01
0.001
25
20
15
10
5
0
G L15T
G L12T
G L05T
T J = 25 °C
0.2
0.4
0.6
0.8
1
0.01
0.1
1
10
100
1000
10 000 100 000
V F in V
Fig. 1 - Typical Forward Current I F vs. Forward Voltage V F
100
Pin 3 - 1
10
1
0.1
0.01
0.001
I R in μA
Fig. 3 - Typical Reverse Voltage V R vs. Reverse Current I R
0.5
0.6
0.7
0.8
0.9
V F in V
Fig. 2 - Typical Forward Current I F vs. Forward Voltage V F
Rev. 1.9, 26-Feb-13
4
Document Number: 85809
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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